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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK6Q60W,S1VQ Toshiba Semiconductor and Storage

TK6Q60W,S1VQ

MOSFET N-CH 600V 6.2A IPAK

Toshiba Semiconductor and Storage

183 -
Datasheet DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Ta) 10V 820mOhm @ 3.1A, 10V 3.7V @ 310µA 12 nC @ 10 V ±30V 390 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Through Hole IPAK
TK6P60W,RVQ Toshiba Semiconductor and Storage

TK6P60W,RVQ

MOSFET N CH 600V 6.2A DPAK

Toshiba Semiconductor and Storage

645 -
Datasheet DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Ta) 10V 820mOhm @ 3.1A, 10V 3.7V @ 310µA 12 nC @ 10 V ±30V 390 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK11P65W,RQ Toshiba Semiconductor and Storage

TK11P65W,RQ

MOSFET N-CH 650V 11.1A DPAK

Toshiba Semiconductor and Storage

462 -
Datasheet DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 11.1A (Ta) 10V 440mOhm @ 5.5A, 10V 3.5V @ 450µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 100W (Tc) 150°C (TJ) - - Surface Mount DPAK
TPH4R606NH,L1Q Toshiba Semiconductor and Storage

TPH4R606NH,L1Q

MOSFET N-CH 60V 32A 8SOP

Toshiba Semiconductor and Storage

4,625 -
Datasheet U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 32A (Ta) 6.5V, 10V 4.6mOhm @ 16A, 10V 4V @ 500µA 49 nC @ 10 V ±20V 3965 pF @ 30 V - 1.6W (Ta), 63W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
TK7P60W,RVQ Toshiba Semiconductor and Storage

TK7P60W,RVQ

MOSFET N CH 600V 7A DPAK

Toshiba Semiconductor and Storage

1,988 -
Datasheet DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 600mOhm @ 3.5A, 10V 3.7V @ 350µA 15 nC @ 10 V ±30V 490 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK12P60W,RVQ Toshiba Semiconductor and Storage

TK12P60W,RVQ

MOSFET N CH 600V 11.5A DPAK

Toshiba Semiconductor and Storage

1,930 -
Datasheet DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 340mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 100W (Tc) 150°C (TJ) - - Surface Mount DPAK
XPJ1R004PB,LXHQ Toshiba Semiconductor and Storage

XPJ1R004PB,LXHQ

40V; UMOS9; MOSFET 1MOHM; L-TOGL

Toshiba Semiconductor and Storage

2,975 -
Datasheet - 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Ta) 6V, 10V 1mOhm @ 80A, 10V 3V @ 500µA 84 nC @ 10 V ±20V 6890 pF @ 10 V - 223W (Tc) 175°C Automotive AEC-Q101 Surface Mount S-TOGL™
TPW2R508NH,L1Q Toshiba Semiconductor and Storage

TPW2R508NH,L1Q

PB-F POWER MOSFET TRANSISTOR DOS

Toshiba Semiconductor and Storage

10,902 -
Datasheet U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 150A (Ta) 10V 2.5mOhm @ 50A, 10V 4V @ 1mA 72 nC @ 10 V ±20V 6000 pF @ 37.5 V - 800mW (Ta), 142W (Tc) 150°C - - Surface Mount 8-DSOP Advance
TPW1500CNH,L1Q Toshiba Semiconductor and Storage

TPW1500CNH,L1Q

PB-F POWER MOSFET TRANSISTOR DSO

Toshiba Semiconductor and Storage

6,746 -
Datasheet U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 38A (Tc) 10V 15.4mOhm @ 19A, 10V 4V @ 1mA 22 nC @ 10 V ±20V 2200 pF @ 75 V - 800mW (Ta), 142W (Tc) 150°C - - Surface Mount 8-DSOP Advance
TK9R7A15Q5,S4X Toshiba Semiconductor and Storage

TK9R7A15Q5,S4X

150V UMOS10-HSD TO-220SIS 9.7MOH

Toshiba Semiconductor and Storage

388 -
Datasheet U-MOSX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 150 V 49A (Tc) 8V, 10V 9.7mOhm @ 24.5A, 10V 4.5V @ 1.1mA 50 nC @ 10 V ±20V 3690 pF @ 75 V - 45W (Tc) 175°C - - Through Hole TO-220SIS
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.